• 专利附录
  • 专利说明
  • 权利要求
  • 类似技术
  • 同族专利
  • 引用文献
  • 法律状态
  • 优先权
    • 专利摘要:
    Switch provided with: - a structure based on at least one phase-change material arranged between a first conductive element and a second conductive element, the phase-change material being able to change state; heating the phase change material provided with at least a first heating electrode and at least one other heating electrode, the phase change material-based structure being configured to form an active area (8) of contiguous and remote phase change material of the conductive elements (FIG. 3).
    公开号:FR3053536A1
    申请号:FR1656363
    申请日:2016-07-04
    公开日:2018-01-05
    发明作者:Gabriele NAVARRO；Damien Saint-Patrice；Alexandre LEON；Vincent Puyal；Bruno Reig
    申请人:Commissariat a lEnergie Atomique CEA；Commissariat a lEnergie Atomique et aux Energies Alternatives CEA；
    IPC主号:
    专利说明:

    Holder (s): COMMISSIONER OF ATOMIC ENERGY AND ALTERNATIVE ENERGIES Public establishment.
    Extension request (s)
    Agent (s): BREVALEX Limited liability company.
    SWITCH COMPRISING A PHASE CHANGE MATERIAL (X) BASED STRUCTURE OF WHICH A PART ONLY IS ACTIVABLE.
    FR 3 053 536 - A1 (57) Switch equipped with:
    a structure based on at least one phase change material disposed between a first conductive element and a second conductive element, the phase change material being capable of changing state,
    - means for heating the phase change material provided with at least a first heating electrode and at least one other heating electrode, the structure based on phase change material being configured so as to form a zone active (8) of confined phase change material and offset from the conductive elements (Figure 3).

    i
    SWITCH HAVING A PHASE CHANGE MATERIAL (X) BASED STRUCTURE OF WHICH A PART ONLY IS ACTIVABLE
    DESCRIPTION
    TECHNICAL AREA AND PRIOR ART
    The present application relates to the field of switches incorporating a phase change material in particular to those produced in thin layers and which can be part of an integrated circuit or an electronic device. The present invention applies in particular to RF switches, that is to say structures intended to reversibly modify the electrical connections between elements of an RF circuit.
    RF switches are usually made from electronic components such as Field Effect Transistor (FET) or PIN (for Positive Intrinsic Negative) diodes or using electro-mechanical relays MEMS type (for “Micro Electro Mechanical System”).
    RF switches incorporating a phase change material (PCM) have also appeared.
    The operation of an RF switch based on PCM material is typically based on two states that this material is likely to adopt:
    - an amorphous state with high resistivity, which is assimilated to a blocked state (OFF) of the switch during which the transmission of an RF signal between at least two terminals is prevented,
    - a crystalline state with low resistivity, which constitutes a passing state (ON) of the switch during which the transmission of the RF signal between the two terminals is allowed.
    Both states are stable, it is not necessary to maintain a current / voltage to maintain a state which allows a power saving compared to other technologies such as switches based on FET or diode
    PINE.
    In addition, a switch provided with PCM material makes it possible to route signals of greater power compared to those usually conveyed by MEMS switches.
    Document US 2014/0266517 A1 provides an example of a switch provided with a PCM material inserted between an input conductive line and an output conductive line through which an RF signal is intended to pass.
    The phase change of the PCM material is obtained by passing a current pulse through dedicated electrodes arranged in direct contact with the PCM material or at a distance from the latter.
    In order to limit the consumption of the switch, a direct heating mode is preferred, that is to say that heating is produced by the Joule effect using electrodes directly in contact with the PCM material.
    In such a type of switch, the change of state from passing to blocked or vice versa is achieved by modifying the state of the entire volume of PCM material.
    The problem arises of making a PCM material switch with improved performance, in particular in terms of consumption and / or reliability.
    STATEMENT OF THE INVENTION
    One embodiment of the present invention relates to a switch able to connect, or to interrupt a connection between, at least a first conductive element and at least a second conductive element, the switch being formed on a support and comprising:
    a structure based on at least one phase change material disposed between the first conductive element and the second conductive element, the phase change material being able to change state between a crystalline state in which the change material phase has a first resistivity and an amorphous state in which the phase change material has a second resistivity greater than the first resistivity,
    - means for heating the phase change material provided with at least a first electrode and at least a second electrode, the heating means being capable of causing a given volume of the structure of change material to change state phase called active area and in particular to put in an amorphous state the active area, the structure of phase change material being configured so that the active area is not in contact with the first conductive element and the second conductive element and is disposed between a first volume of phase change material in a crystalline state in contact with the first conductive member and a second volume of phase change material in a crystalline state in contact with the second conductive member so that the active zone separates the first volume from the second volume and prevents the routing of a signal between the first volume and the second volume me, when the central volume forming the active area is in the amorphous state. The change of state of the active zone is reversible, so that the active zone when it is in an amorphous state can be put again in a crystalline state.
    In a switch according to the invention, the arrangement of the structure of PCM material with respect to the conductive elements and to the electrodes is provided so that the active zone does not occupy the entire volume of the structure of PCM material and is located and away from the conductive elements. Thus, the energy required for the fusion of the active area can be minimized and the cooling kinetics to maintain the amorphous state increased. By confining the active area and moving it away from the conductive elements, the thermal power required to change the state of the PCM material is reduced. A remote active zone makes it possible to have a homogeneous PCM material at the active zone and to avoid heterogeneous amorphous / crystalline interface zones of PCM material at the contact zones between the conductive elements and the structure of PCM material. . This makes it possible to further mark the different blocked or passing states of the switch, in other words to make it more reliable.
    According to another aspect, the present invention relates to a switch able to connect, or to interrupt a connection between, at least a first conductive element and at least a second conductive element, the switch being formed on a support and comprising:
    a structure based on at least one phase change material placed between the first conductive element and the second conductive element,
    - means for heating the phase change material provided with at least a first electrode and at least a second electrode, the heating means being able to change the state of a volume called the active area of the material structure with phase change, the structure of phase change material being formed of at least one central region disposed between the first conductive element and the second conductive element and between the first electrode and the second electrode, the structure of change material phase, being furthermore provided with a first zone also called “first branch”, with a second zone also called “second branch”, with a third zone also called “third branch”, with a fourth zone still called “ fourth branch ", distinct and which are distributed around the central region and extend so that the first branch is in contact with the first conductive element, the second branch is in contact with the second conductive element, the third branch is in contact with the first electrode, and the fourth branch is in contact with the second electrode. Thus, the structure of PCM material can advantageously have the shape of a cross. Such an arrangement of the structure of PCM material allows confinement of the active area and improves the performance in terms of consumption and / or reliability of the switch.
    Between the first branch and the fourth branch, a first insulating portion may be provided. Between the fourth branch and the second branch, a second insulating portion can also be provided. Similarly, between the second branch and the third branch a third insulating portion can also be provided. A fourth insulating portion can also be provided between the third branch and the first branch.
    Advantageously, the third branch and the fourth branch have a width less than the width of the first branch and the second branch. This makes it possible to promote the implementation of a remote active zone with respect to the first conductive element and the second conductive element.
    According to one possibility of implementing the structure of PCM material, at least one of said branches has a narrowed shape as one approaches the central region. This can improve the confinement of the active area in a central region of the PCM structure.
    A switch can be provided with a horizontal arrangement of the PCM structure. In this case, the first branch, the second branch, the third branch and the fourth branch extend parallel to a main plane of the support.
    Alternatively, a switch can be provided with a vertical arrangement of the PCM structure. In this case, the first branch and the second branch extend in a first plane, the third branch and the fourth branch extend in a second plane, the first plane and the second plane achieving between them a non-zero angle, the first plane and the second plane can be orthogonal.
    According to one possibility of implementing the structure of phase change material, it can be formed between the first electrode and the second electrode of a stack comprising a first layer based on a first phase change material , the first layer being disposed between a second layer and a third layer, the second layer and the third layer being based on at least one second phase change material different from the first phase change material.
    The first phase change material may have a melting temperature lower than the melting temperature of the second phase change material and / or a higher thermal conductivity than the thermal conductivity of the second phase change material. Such an arrangement allows better confinement of the active area at the level of the first layer.
    The phase change material structure can be formed of a stack comprising a first layer of PCM material disposed between a second layer of PCM material and a third layer based on PCM material, the second layer of PCM material and / or the third layer of PCM material having respective sections narrowed as one moves away from the first electrode and the second electrode respectively and as one approaches the first layer of PCM material. Such an arrangement also allows better confinement of the active area at the level of the first layer.
    According to a possible implementation of the phase change material structure, this can be formed between the first electrode and the second electrode of a stack comprising a first layer of PCM material disposed between a second layer of PCM material and a third layer of PCM material, the first layer of PCM material having a thinned portion disposed between a portion of the second layer of PCM material and a portion of the third layer of PCM material. Such an arrangement also allows better confinement of the active area at the level of the first layer.
    Advantageously, the switch is an RF switch, capable of routing an RF signal or of interrupting the routing of the RF signal between the first conductive element and the second conductive element.
    According to another aspect, the present invention relates to a switch system comprising a plurality of switches as defined above and arranged in parallel so that the respective first conductive elements of the switches are connected to each other and so that the respective second conductive elements of the switches are connected together.
    A first embodiment of such a system provides an arrangement of the switches in which the respective first electrodes of the switches are connected to each other, the respective second electrodes of the switches are connected to each other. The electrodes of the heating means are thus placed in parallel.
    The first respective electrodes of the switches are then connected to a first polarization means, while the second respective electrodes of the switches are connected to each other and to a second polarization.
    A second embodiment of such a system provides an arrangement of switches in which the first electrode of a first switch is connected to a first bias means, the second electrode of the first switch being connected to the first electrode of a switch next, and the second electrode of a last switch is connected to a second bias means. The electrodes of the heating means are thus placed in series.
    The first bias means may be a current generator and the second bias means may also be a current generator. The first biasing means may in particular be a current generator configured to send current pulses, for example in the form of slots. The second polarization means can for example be an alternating current generator.
    BRIEF DESCRIPTION OF THE DRAWINGS
    The present invention will be better understood on reading the description of examples of embodiments given, purely by way of indication and in no way limiting, with reference to the appended drawings in which:
    - Figure 1 is used to illustrate an example of an RF switch or RF switch implemented according to an embodiment of the present invention provided with at least one integrated PCM material, the device being shown in a top view;
    - Figure 2 gives a sectional view of the switch;
    - Figure 3 gives a top view of a switch with a structure of PCM material formed of branches distributed around a central region, the branches being widened when moving away from the central region;
    - Figure 4 gives a heating map of the switch of Figure 3 obtained by simulation;
    - Figures 5A and 5B are used to illustrate an alternative implementation of a switch comprising a PCM material structure in the form of a cross with branches which extend horizontally and branches which extend vertically;
    - Figure 6A is used to illustrate a structure of PCM material for switch with a stack of layers of phase change materials with advantageously different respective melting temperatures and / or different thermal conductivities;
    - Figure 6B is used to illustrate a structure of PCM material for switch with a stack of layers of material (x) with phase change of narrowed shape as one approaches the center of the structure;
    FIG. 6C serves to illustrate a structure of PCM material for a switch with a stack of layers of phase change material (s), one of the layers having a thinner part at its center than at the periphery;
    - Figure 7 is used to illustrate a switching device comprising a plurality of switches based on PCM material placed in parallel, the heating electrodes being arranged in parallel;
    - Figure 8 is used to illustrate a switching device comprising a plurality of switches based on PCM material placed in parallel, the heating electrodes being arranged in series;
    - Figures 9A-9C, 10A-10C serve to illustrate an example of a method for manufacturing a switch with a structure of phase change material having branches distributed in a horizontal plane;
    FIGS. 11A-11M serve to illustrate another example of a method for manufacturing a switch with a structure of phase change material having branches distributed in a horizontal plane and branches distributed in a vertical plane;
    In addition, in the description below, terms which depend on the orientation of the device such as "horizontal", "vertical" apply while considering that the structure is oriented as illustrated in the figures.
    Identical, similar or equivalent parts of the different figures have the same reference numerals so as to facilitate the passage from one figure to another.
    The different parts shown in the figures are not necessarily shown on a uniform scale, to make the figures more readable.
    DETAILED PRESENTATION OF PARTICULAR EMBODIMENTS
    An example of a switch according to an embodiment of the present invention will now be described in conjunction with FIG. 1 giving a top view.
    This switch makes it possible to modify the connections of at least one circuit (not shown) which, in this exemplary embodiment, is intended to carry radio frequency (RF) signals. The switch is thus an RF switch capable of routing or interrupting the routing of an RF signal between a first portion of the circuit and a second portion of the circuit, depending on the state of at least one phase change material. (PCM) arranged between these two portions. The device described here can fulfill the function of a bistable switch. The term "switch" will nevertheless be used throughout this detailed description. The RF signal carried has a frequency which can be for example between several megahertz and several hundred gigahertz and a power for example of the order of 40 dBm.
    The switch thus comprises a first conductive element 2 by which at least one RF signal is intended to enter and which is connected with the first portion (not shown) of RF circuit and a second conductive element 4 connected with the second portion (not shown) of the RF circuit and through which the RF signal is thus intended to exit. The conductive elements 2, 4 are for example based on a metallic material such as gold (Au) and in the form of pads of thickness for example of the order of 1 μm.
    The first conductive element 2 and the second conductive element 4 thus form two terminations of an RF electrical signal transmission line, these two terminations being separated from each other by a structure based on at least one material to be phase change 7 and being electrically connected to, and advantageously in contact with, this structure.
    The switch is capable of adopting a first state called “on” state in which the first conductive element 2 and the second conductive element 4 are connected to each other so that at least one RF signal can pass from the first conductive element 2 to the second conductive element 4. The switch is susceptibleο also capable of adopting a second state called “blocked” state in which between the first conductive element 2 and the second conductive element 4, the transmission of an RF signal is prevented .
    The “on” and “blocked” states of the switch correspond to different states of a volume or of an area 8 of the material structure 7 with phase change called “active area”. The phase change material 7 may in particular be a material capable of passing from an amorphous state to a crystalline state and vice versa as a function of the temperature to which it is brought. Thus, the active zone 8 of phase change material 7 disposed between the conductive elements 2, 4 is likely, when the material 7 is in amorphous form, to adopt a state of high resistivity, and when the material 7 is under crystalline form, adopt a state of low resistivity. By "low resistivity" is meant a resistivity which may be for example between 10 4 ohm.cm and 10 2 ohm.cm. By "high resistivity" is meant a resistivity which can be for example between 10 ohm.cm and 1000 ohm.cm.
    When the phase change material 7 of the active zone 8 is in its weakly resistive crystalline state, the RF signal is transmitted from the first conductive element 2 to the second conductive element 4 while when the phase change material 7 of the zone active 8 is in its highly resistive amorphous state, the RF signal is reflected and is therefore not transmitted to the second conductive element 4.
    By changing the state of the material 7 between its amorphous state and its crystalline state, it is therefore possible to obtain a switch function.
    The phase change material 7 may for example be based on a chalcogenide or an alloy of chalcogenides for example based on Germanium and Tellurium such as GeTe or else based on Germanium, Tellurium and Antimony (Ge x Sb y Te z ). Advantageously, such materials have a high resistivity ratio, for example of the order of 10 3 and which can reach 10 6 between their state of low resistivity and their state of high resistivity. The thickness (dimension measured parallel to the z axis of the orthogonal coordinate system [0; x; y; z]) of material with phase change 7 can for example be of the order of 100 nm.
    To pass the phase change material 7 from a crystalline state to an amorphous state and vice versa, the device is provided with means for activating the PCM material 7, these means here being heating means preferably of the electrical type. A direct heating means configured to inject an electrical activation signal, for example in the form of a current in the PCM material 7 which is then heated by the Joule effect. The direct heating means is provided with electrodes 11, 13 in contact with the structure of PCM material 7 and between which this structure is disposed.
    When an appropriate current pulse passes between the two electrodes 11 and 13 through the material 7 PCM, the active zone 8 of this material passes from a crystalline state to a highly resistive amorphous state. The active area 8 is then configured so as to block the passage of an RF signal between the first conductive element 2 and the second conductive element 4.
    To pass the material 7 PCM of the active zone 8 from its amorphous state to its crystalline state, another suitable current pulse is applied between the two electrodes 11,13 through the material 7 PCM.
    The current pulse can have an intensity between several hundred micro-amps and several tens of mA depending on the amount of PCM material.
    One can for example provide pulses of the order of 1 mA and a duration of the order of 10 ps to effect crystallization, while to achieve amorphization, the current pulses have a higher intensity, for example of the order of 10 mA and a shorter duration, for example of the order of 50 ns.
    The electrodes 11, 13 of the direct heating means are dissociated from the conductive elements 2, 4 through which the RF signal passes. The electrodes 11, 13 may be in the form of pads of thickness for example of the order of 1 μm and based on a conductive material different from that of the conductive elements 2, 4 for example such as duTiN.
    In the switch implemented according to the invention, the volume of the active area 8 (hatched area in FIG. 1) intended to change state does not correspond to the entire volume of phase change material 7. On indeed only modifies the state of a given volume of phase change material and remaining volumes of phase change material are preserved, the state of which is not modified around the active zone.
    Thus, even when the switch is in a blocked state, for which a signal is prevented from passing between the first conductive element and the second conductive element, only the active zone 8 is put in amorphous form while remaining volumes of material to change phase 7 located on either side of the active area 8 are in crystalline form. In such a device, the active area 8 which is capable of changing the state of the electrodes 11, 13 is moved away in order to reduce the power necessary for the change of state. An active zone 8 thus remote makes it possible to limit the consumption of the switch. Confining the active area in a given volume, in particular situated in a central region of the structure of phase change material also makes it possible to obtain a better homogeneity of the state (amorphous or crystalline) of the material of change of phase and thus increase the reliability of the switch and improve its performance in terms of speed.
    For a given intensity of activation current injected into the first heating electrode, the arrangement of the active zone 8 depends in particular on the arrangement of the structure of phase change material 7, in particular with respect to the electrodes 11, 13 and to the conductive elements 2, 4.
    In the example of FIG. 1, the phase change material is distributed in the form of a central region 80 and separate branches 81a, 81b, 82a, 82b distributed around this central region 80, the branches extending from the central region as far as the first electrode 11, the second electrode 13, the first conductive element 2, the second conductive element 4, respectively.
    The central region 80 and the branches 81a, 81b form a first block arranged between the conductive elements 2 and 4, while the central region 80 and the branches 82a, 82b form a second block which extends between the electrodes 11, 13, and crosses or overlaps the first block. In this particular embodiment, the first block is orthogonal to the second block, the branches 81a, 81b, 82a, 82 thus extending in four different regions.
    The central region 80 and the branches 81a, 81b, 82a, 82b thus form a cross-shaped configuration with four branches, the ends of which are located in contact respectively with the first electrode 11, the first conducting element 2, the second conducting element 13 , and the second electrode 4. The branches 81a, 81b, 82a, 82b are separated from each other and can be separated in pairs by an insulating region provided around the phase change material. This insulating region, for example in the form of at least one dielectric material, comprises a portion 93A located between the branch 81a connected to the first electrode 11 and the branch 82a connected 11 to the first conductive element 2. An insulating portion 93B is located between the branch 82a connected to the first conductive element 2 and the branch 81b connected to the second electrode 13. Another insulating portion 93C is located between the branch 81b connected to the second electrode 13 and the branch 82b connected to the second conductive element 4. Another insulating portion 93D is disposed between the branch 82b connected to the second conductive element 4 and the branch 81a connected to the first electrode 11.
    In this example, the branches 81a, 81b, are orthogonal to the branches 82a, 82b. The branches 81a, 81b, 82a, 82b have a constant cross section, this cross section being taken orthogonally to the main plane of a support on which the switch is arranged. By “main plane” of the support is meant a plane passing through the support and which is parallel to the plane [0; x; y] of the orthogonal coordinate system [0; x; y; z] given in Figure 1.
    The support on which the branches 81a, 81b, 82a, 82b are arranged can be a semiconductor substrate 0 as shown schematically in Figure 2 giving a cross-sectional view A'A.
    The semiconductor substrate 0 is for example made of silicon and passivated by means of an insulating layer 1 for example based on S1O2 on which the structure of PCM material is arranged. The PCM material 8 is here distributed in a layer which extends over and against the electrodes 11,13.
    Provision is preferably made for the branches 81a, 81b, directed towards the electrodes 11, 13 with a width Lheater less than the width Lrf of the branches 82a, 82b, directed towards the conductive elements 2, 4. The widths Lheateret Lrf are dimensions of the structure of phase change material measured parallel to the main plane of the support, ie a plane parallel to the plane [0; x; y].
    A dimension dRF of the branch 82a or 82b is also defined, measured in an axis parallel to that in which the branch 82a or 82b extends between one end of a branch 82a, 82b and a lateral edge of one of the branches 81a, 81b. This dimension dRF here corresponds to a distance between a conductive element 2 or 4 and the central region 80 of the structure of phase change material.
    By adapting the widths Lheater and Lrf as well as the dimension dRF, the performance of the switch is optimized in terms of current, actuation voltage. We can provide the width Lrf of the branches 82a, 82b for example between 10 nm to 100 pm, the width Lheater of the branches 81a, 81b being for example between 10 nm to 1 pm, and the dimension dRF of for example between 100 nm at 10 pm. Advantageously, the width Lrf is of the order of 1000 nm, while the width Lheater is of the order of 400 nm. The dimension dRF can be in this case for example of the order of 500 nm. With such dimensions and a structure of phase change material based on GeTe and thickness of the order of 100 nm, it is possible to implement a switch with resistors Ron in the on state and Roff in the blocked state of the phase change material structure, for example of the order of 20 Ohm and 2.10 6 Ohm respectively for an activation voltage of about 20 V and an activation current of the order of 20 mA.
    Another example of configuration of the structure of phase change material 7 is given in FIG. 3. The branches 81a, 81b, 82a, 82b are this time narrower near the central region 80 than at the periphery of the structure of phase change material, in other words at the level of the electrodes 11, 13 and of the conductive elements 2, 4.
    The branches 81a, 81b, thus have a width Lheateri in an area respectively in contact with the electrodes 11,13 greater than a width Lheater2 near the central region 80 of the structure of phase change material. Provision may be made for the branches 81a, 81b to shrink so that Lheateri-Lheater2is equal to at least 30 nm, and for example of the order of 100 nm.
    Likewise, the branches 82a, 82b, can be provided with a width Lrfi in an area in contact respectively with the conductive elements 2, 4 greater than a width Lrf2 near the central region 80 of the structure of change material phase. It is also possible to provide for the narrowing of the branches 82a, 82b so that Lrfi - ÎRF2is equal to at least 30 nm, and for example of the order of 100 nm.
    This narrowed shape of the branches 81a, 81b and / or 82a, 82b at the central region 80 of the structure of phase change material makes it possible to further concentrate the active area 8 in the central region 80 of the structure of change material phase.
    This is confirmed by a simulation result illustrated in FIG. 4 which gives a heating map of the structure of the phase change material of the switch described previously in connection with FIG. 3. Such a map can be obtained for example at using a simulation and numerical analysis tool using the finite element method such as FlexPDE software.
    In the exemplary embodiments which have been given previously, the heating means have a horizontal arrangement with electrodes 11, 13 situated in the same plane, substantially parallel or parallel to the main plane of the support / substrate.
    FIG. 5A illustrates an alternative embodiment with a vertical distribution of the heating means, the electrodes 11, 13 being located in the same plane producing a non-zero angle and in particular orthogonal to the main plane of the support, while the conductive elements 2 , 4 are located in the same plane parallel to the main plane of the support. This reduces the size of the switch in a plane parallel to the support.
    The structure of phase change material is in this example formed by a stack of several layers 71, 72, 73 of phase change material, for example GeTe, distributed in a central region 80, and around the central region 80 of peripheral branches 81a, 81b, 82a, 82b to which the electrodes 81a, 81b and the conductive elements 82a, 82b are respectively connected.
    In this example, the branches 82a, 82b connected respectively to the conductive elements 2, 4 extend in a first plane and are formed from a first layer 71 of the stack, while the branches 81a, 81b connected to the electrodes 11, 13, are formed respectively from a second layer 72 and a third layer 73 of the stack, and contained in a second plane nonparallel to the foreground and in particular orthogonal to the foreground. The cross structure of phase change material is surrounded by an insulating region 93, for example formed by one or more layers of Si N.
    FIG. 5B illustrates the location of the active area 8 in such a structure. Here again, the active area 8, that is to say the area of PCM material capable of changing state, represents only part of the total volume of PCM material distributed between the electrodes 11, 13 and between the conductive elements. 2, 4. In this example, the active area is confined to the central region 80 of the structure of PCM material and does not extend to the ends of the branches 81a, 81b, 82a, 82b. The central region 80 between the branches is capable of passing from a crystalline state to an amorphous state and vice versa, while the ends of the branches 81a, 81b, 82a, 82b remain in a crystalline state.
    FIGS. 6A, 6B, 6C illustrate alternative stacking of layers of phase change material (s) capable of being integrated into the switch, and in particular that of FIGS. 5A, 5B. Advantageously, these may be layers of different nature.
    In the stack of FIG. 6A, the first layer 71 of PCM material in which the active area 8 is capable of being produced is based on a phase change material having a first melting temperature, while the second layer 72 and the third layer 73 disposed respectively under and on the first layer 71 are based on a phase change material having a second melting temperature, higher than the first melting temperature.
    In order to better confine the active zone in the structure of PCM material, provision may be made to implement a structure with regions, in particular in the form of stacked layers, of PCM materials having different melting temperatures and / or thermal conductivities different.
    For example, the first layer 71 is made of GesoTeso with a melting temperature of around 750 ° C and the second and third layers 72, 73, of Ge7oTe3o with a melting temperature of around 900 ° C. In such an embodiment, by placing layer 71 between two layers of material having a higher melting temperature, better confinement of the active zone is obtained, the latter being able to be located mainly in a portion of the first layer 71 located between and in contact with the second and third layers 72, 73 of phase change material.
    As a variant, it is possible to provide a first layer 71 of greater thermal conductivity than the second layer 72 of PCM material and than the third layer of PCM material. An example of stacking is formed for example using a first layer 71 of GesoTeso disposed between two layers based on a PCM material of lower thermal conductivity, for example GezSbzTes.
    Another stacking example illustrated in FIG. 6B provides layers 72, 73 having a contact surface with the heating electrodes 11, 13 greater than the contact surface with the first layer of phase change material. The layers 72, 73 have a narrowed shape as one moves away from the heating electrodes and as one approaches the area of the first layer 71 forming the central region of the structure of PCM material in which the active area is planned to be mainly distributed.
    In the stacking example of FIG. 6C, the first layer 71 which is located between the second and third layers 72, 73 this time comprises a thinned part disposed between and in contact with the second and third layers 72, 73. This part of the first layer 71 thinner than its edges forms in this example the central region of the structure of PCM material in which the active area is intended to be mainly distributed.
    Another example of stacking comprises layers 71, 72 or 73 having, as in FIG. 6B, a variable section when considering a vertical plane (in other words a plane parallel to the plane [Ο, χ, ζ]), the first layer 71 having, as in Figure 3, a cross shape with branches narrowed towards the center of the stack.
    A switch according to either of the embodiments described above can be integrated into a switch system comprising several switches in parallel. Such a system can optionally integrate one or more switches with vertical arrangement as illustrated in FIGS. 5A-5B and one or more switches with horizontal arrangement as illustrated for example in FIGS. 1 or 3.
    An example of implementation of a system with switches connected in parallel is given in FIG. 7.
    To route or interrupt the routing of at least one RF signal between a first portion P1 of a circuit and a second portion P2 of circuit, this time therefore uses a plurality of switches Ci, C2, ..., Ck (with k equal to 7 in the example illustrated). The switches Ci, ..., C7 are arranged in parallel so that their respective first conductive elements 2 are connected to each other while their respective second conductive elements 4 are also connected to each other. In the example of FIG. 7, the switches Ci, C2, ..., Ck are arranged so that the first respective heating electrodes 11 of the switches are connected to each other and to a first bias line 91 while the respective second heating electrodes 13 of the switches are also connected to each other and to a second bias line 92.
    An advantage of such a solution system is that a low DC control voltage Vmax is applied to the bias lines 91, 92 and that this voltage Vmax is equal to the threshold voltage Vth also called the switching voltage of a single switch . The threshold voltage Vth depends on the thickness of the PCM material structure at the active zone. For an active zone of thickness of the order of 100 nm, the threshold voltage is for example of the order of IV.
    A variant of a switch system with several switches C1, ...., C7 in parallel is illustrated in FIG. 8. This configuration example differs from the previous one in that the heating electrodes 11, 13 are this time arranged in series. so that a first heating electrode 11 of a switch C2 is connected to the second electrode 13 of a previous switch C1, while the second heating electrode 13 of switch C2 is connected to the first electrode 11 of a next switch C3.
    Polarization means are this time provided for applying a DC voltage between the first electrode 11 of a first switch C1 situated at one end 95 of the set of switches C1, ...., C7 and the second electrode 13 of another switch C7 located at another end 96 of the set of switches C1, ...., C7 placed in parallel. Such a configuration makes it possible to have a DC current (IDC-TOT) of control equivalent to that of a single switch and a better transition from a blocked state (OFF) to a passing state (ON) due to a better uniformity between the respective temperature profiles of the different switches. In a case, for example, where the switch system is formed by several switches of the type illustrated in FIG. 1, this unitary device will be put in parallel. For k switches in parallel, divide by k the resistor Ron in the on state and the resistance Roff while retaining the activation voltages and currents of a single switch. In this case with k switches in parallel, one can choose the dimensions Lrf for example equal to k * 1000 nm, dRF for example of the order of 500 nm and Lheater for example of the order of 400 nm.
    In one or other of the parallel switch systems described above, a decoupling capacitor 95 is preferably integrated between the first conductive element 2 of each switch and the first portion of the PI circuit and between the first conductive element 4 of each switch and the second portion of circuit P2.
    An example of a method of manufacturing a switch as described above will now be given in connection with FIGS. 9A-9C (illustrating the device in progress according to a top view), FIGS. 10A-10C (illustrating the device in progress according to a cross-sectional view made along an axis A'A).
    The starting support here is a substrate 100 which can be semiconductor and for example made of silicon. The substrate is typically passivated by an insulating passivation layer 101, for example based on silicon dioxide (SiCL) with a thickness for example of the order of 500 nm.
    On this support, the heating means are first of all produced in the form of electrodes 111, 113. The electrodes are produced by deposition, for example of PVD type (for “Physical Vapor deposition”), then photolithography and etching of a stack of conductive materials, for example a layer of Ti with a thickness of the order of 10 nm, on which rests a layer of TiN for example of the order of 40 nm, a layer of AICu for example of the order of 440 nm, a layer of Ti for example of the order of 10 nm, a layer of TiN for example of the order of 100 nm.
    In this particular embodiment, the conductive elements 102, 104 of the switch are formed by which a signal is intended to pass through the same layer or the same stack as the electrodes 111, 113 for activating or heating the change-of-material. phase.
    A layer of insulating material 121 is then deposited, for example made of SiO 2 with a thickness for example of the order of 300 nm, to form an insulation around the electrodes 111, 113 and the conductive elements 102, 104 (FIGS. 9A and 10A).
    The insulating material 121 can be caused to cover the electrodes 111, 113 and the conductive elements 102, 104. In this case, to allow the upper face of the electrodes 111, 113 and the conductive elements 102, 104 to be exposed, planarization is carried out by CMP (for “Chemical Mechanical Polishing / Planarization”).
    A structure of phase change material 7 is then formed, by depositing a layer for example of GeTe, having a thickness typically of the order of 100 nm, in which at least one cross-shaped pattern is produced (FIGS. 9B and 10B).
    The pattern produced may be of that described above in connection with Figure 1 or with Figure 3 and has a central region 180 around which are distributed branches 181a, 182a, 181b, 182b respectively in contact with a first electrode 111 , a first conductive element 102, a second electrode 113, a second conductive element 104. The structuring of the layer of phase change material 7 is typically carried out by IBE etching (for “Ion Beam Etching”) through a resin mask.
    In order to passivate the structure of PCM material 7, an insulating layer 123 is then formed, for example based on SiN and with a thickness of the order of 200 nm. In this insulating layer 123, separate openings 125a, 125b, 125c, 125d are made, respectively revealing the first electrode 111, the first conductive element 102, the second electrode 113, the second conductive element 104. Contacts can thus be resumed on the electrodes 111,113 and the conductive elements 102,104 (Figures 9C and 10C).
    In the example of the process which has just been described, the switch produced is of the type with horizontal arrangement of the structure of phase change material as well as of the electrodes and conductive elements distributed around this structure.
    Another exemplary method of making a switch in which branches of the structure of phase change material extend vertically will now be given in connection with Figures 11A-11M.
    First of all, on a support substrate, the control electrodes 111, 113 are produced to heat the phase change material and the conductive elements 102, 104 to enable the transmission or blocking of an RF signal.
    The electrodes 111,113 and conductive elements 102,104 can be produced for example from the same stack as in the example of the method given above ie of a Ti layer of thickness 10 nm surmounted by a layer of TiN of 40 nm covered a layer of AICu for example of the order of 440 nm, itself covered with a layer of Ti for example of the order of 10 nm, itself coated with a layer of TiN for example of around 100 nm. A layer of insulating material 121 is then formed around the conductive elements and electrodes (FIG. 11A).
    Then, in order to produce RF decoupling capacitors connected to the conductive elements, strips 131 of dielectric material of the capacitors are formed which extend over the conductive elements 102, 104 (FIG. 11B). The dielectric material used can for example be based on SiO2, or SiN or AbOI with a thickness dependent on the desired capacity value typically between 10 nm and 1 μm.
    A layer of phase change material 172 is then deposited, for example based on GeTe of thickness for example of the order of 100 nm which is structured for example by IBE etching ("Ion Beam Etching") at 1 using an ion beam by protecting certain parts with one or more zones 132 of hard mask. The hard mask areas 132 are for example made of silicon nitride (INS) with a thickness for example of 150 nm. The etching is carried out so as to form blocks 172a of phase change material. The blocks 172a have an enlarged shape, here with a larger surface base than that of their top (FIG. 11C).
    In the particular embodiment of FIG. 11C, the blocks 172a of PCM material can have a shape of a truncated pyramid.
    In order to encapsulate and passivate the blocks 172a of PCM material, at least one insulating layer 133. is then formed. The insulating layer 133 is for example formed by a stack of dielectric materials comprising a layer based on INS and of thickness example of the order of 100 nm coated with another layer based on S1O2 and of thickness for example of the order of 300 nm. Planarization is then carried out by CMP of the stack of dielectric materials so as to again reveal the areas 132 of hard mask (FIG. 11D).
    In the insulating layer 133, openings 135 are then formed revealing the strips 131 of dielectric material with RF decoupling capacities (FIG. 11E).
    These openings 135 are then filled with at least one conductive material 137 in order to form a frame for the RF decoupling capacities. The conductive material 137 may in particular be a metallic material such as for example AICu with a thickness of the order of 300 nm.
    When this material overflows from the mouth of the openings 135 and covers the insulating layer 133, a planarization is then carried out by CMP of the conductive material 137 so as to reveal the upper face of this insulating layer 133.
    Conductive pads 139 are then produced on and in contact with the upper armatures of the decoupling capacitors (FIG. 11G). The conductive pads 139 are formed for example of a stack of a layer of Ti of thickness for example of 10 nm surmounted by a layer of TiN for example of 40 nm covered with a layer of AICu for example of 440 nm, itself covered with a layer of Ti, for example 10 nm, itself coated with a layer of TiN, for example, 100 nm. The contacts 139 are typically formed by deposition by PVD and then etching.
    An encapsulation of the conductive pads 139 is then carried out by depositing at least one layer of dielectric material 141 such as for example Si N or SiO 2 with a thickness for example of the order of 450 nm. A CMP planarization can then be carried out so as to remove a portion of the layer of dielectric material 141 and again reveal the upper face of the conductive pads 139.
    Openings 143 are then formed between the conductive pads 139. The openings 143 are made so as to reveal the blocks 172a of the layer of phase change material 172 (FIG. 111). Another layer 171 of phase change material is then formed in the openings 143. This other layer 171 may for example be based on GeTe and a thickness of the order of 300 nm. A CMP polishing of a possible excess thickness of the other layer 171 of phase change material can then be carried out so as to reveal again the conductive pads 139 and the encapsulation dielectric.
    Advantageously, over-etching can be carried out in order to reduce the layer 171 of phase change material, in particular at the center of the pattern located between the conductive pads 139.
    This makes it possible to locate more precisely the active area in the structure of phase change material (x).
    Another insulating encapsulation layer 145 is then formed based on a dielectric material such as for example SIN or SiO 2 with a thickness for example of the order of 100 nm.
    Openings 147 are made in this insulating encapsulation layer 145. The openings 147 reveal the layer 173 of phase change material.
    In this example, the openings 147 have a bottom with a section taken parallel to the main plane of the substrate 100 which is less than a section taken parallel to the main plane of the substrate 100 of the mouth of the openings 147. The openings 147 have in this example a truncated pyramid shape whose base corresponds to the mouth and whose top corresponds to the bottom of the openings 147.
    Another layer 173 of phase change material such as for example 300 nm thick GeTe is then deposited in the openings 149. CMP polishing of any excess thickness of the layer 173 of phase change material can then be produced so as to reveal again the insulating encapsulation layer 145. The layer 173 in the openings 147 produces blocks 173a of phase change material having the shape of a truncated pyramid.
    Contacts 147 are then made on the blocks 173a of phase change material, each contact 147 can be arranged on several blocks 173a of PCM material. The contacts 147 can be formed by successive deposits so as to produce a conductive stack comprising for example a layer of Ti of thickness for example of the order of 20 nm and a layer of Au of thickness for example of the order of
    400 nm or a TiN layer of thickness for example of the order of 100 nm.
    权利要求:
    Claims (15)
    [1" id="c-fr-0001]
    1. Switch capable of connecting, or interrupting a connection between, at least a first conductive element (2) and at least a second conductive element (4), comprising, on a support (0):
    - a structure based on at least one phase change material (7) disposed between the first conductive element (2) and the second conductive element (4), the phase change material being able to change state between a crystalline state in which the phase change material has a first resistivity and an amorphous state in which the phase change material has a second resistivity greater than the first resistivity,
    - means for heating the phase change material provided with at least a first heating electrode (11) and at least a second heating electrode (13), the heating means being able to put in an amorphous state a central volume called active area (8) of the structure of phase change material, the structure of phase change material being configured so that the central volume is not in contact with the first conductive element and the second element conductive and is disposed between a first volume of phase change material in a crystalline state in contact with the first conductive member and a second volume of phase change material in a crystalline state in contact with the second conductive member so that the central volume separates the first volume from the second volume and prevents the routing of a signal between the first volume and the second volume.
    [2" id="c-fr-0002]
    2. Switch according to claim 1, wherein the structure of phase change material is formed of at least one central region (80, 180) disposed between the first conductive element (2.102) and the second conductive element (4, 104 ) and between the first electrode (11, 111) and the second electrode (13, 113), the phase change material structure, being further provided with a first branch (82a, 182a), with a second branch (82b, 182b) of a third branch (81a, 181a), of a fourth branch (81b, 181b), distinct and which extend around the central region (80,180), the first branch (82a, 182a) being in contact with the first conductive element (2, 102), the second branch (82b, 182b) being in contact with the second conductive element (4, 104), the third branch (81a, 181a) being in contact with the first electrode (11,111), and the fourth branch in contact with the second electrode (13,113).
    [3" id="c-fr-0003]
    3. Switch according to claim 2, the third branch (81a, 181a), and the fourth branch (81b, 181b) having a width less than the width of the first branch (82a, 182a) and of a second branch (82b, 182b).
    [4" id="c-fr-0004]
    4. Switch according to one of claims 2 or 3, wherein at least one of said branches (81a, 81b, 82a, 82b) has at least one narrowed section as one approaches the region central (80).
    [5" id="c-fr-0005]
    5. Switch according to one of claims 2 to 4, wherein the first branch (82a), the second branch (82b), the third branch (81a) and the fourth branch (81b) extend parallel to a main plane of the support (0).
    [6" id="c-fr-0006]
    6. Switch according to one of claims 2 to 5, wherein the first branch (82a) and the second branch (82b) extend in a first plane, the third branch (81a) and the fourth branch (81b) s 'extend in a second plane, the first plane and the second plane achieving between them a non-zero angle, in particular 90 °.
    [7" id="c-fr-0007]
    7. Switch according to claim 6, in which the structure (8) of phase change material is formed between the first electrode (11) and the second electrode (13) of a stack comprising a first layer (71) to base of a first phase change material, the first layer being disposed between a second layer (72) and a third layer (73), the second layer and the third layer being based on at least one second change material phase different from the first phase change material.
    [8" id="c-fr-0008]
    8. Switch according to claim 7, the first phase change material having a melting temperature lower than the melting temperature of the second phase change material and / or a higher thermal conductivity than the thermal conductivity of the second change material phase.
    [9" id="c-fr-0009]
    9. Switch according to one of claims 6 to 8, wherein the phase change material structure is formed between the first electrode and the second electrode of a stack comprising a first layer of phase change material disposed between a second layer of phase change material and a third layer of phase change material, the second layer of phase change material and the third layer of phase change material having respective sections narrowed as they are that one moves away from the first electrode and the second electrode respectively and that one approaches the first layer of phase change material.
    [10" id="c-fr-0010]
    10. Switch according to one of claims 7 to 9, wherein the first electrode and the second electrode are arranged in a plane orthogonal to the main plane of the support, the structure of phase change material is formed between the first electrode and the second electrode of a stack comprising a first layer of phase change material disposed between a second layer of phase change material and a third layer of phase change material, at least the first layer of phase change material comprising a thinned portion disposed between a portion of the second layer of phase change material and a portion of the third layer of phase change material.
    [11" id="c-fr-0011]
    11. Device comprising at least one switch according to one of claims 1 to 10, the switch being an RF switch, capable of routing an RF signal or of interrupting the routing of the RF signal between the first conductive element (2) and the second conductive element (4).
    [12" id="c-fr-0012]
    12. Switch system comprising a plurality of switches according to one of claims 1 to 11, the switches being arranged in parallel so that the respective first conductive elements (2) of the switches are connected together and so that the second conductive elements (4) respective switches are connected to each other.
    [13" id="c-fr-0013]
    13. System comprising a plurality of switches according to one of claims 1 to 12, in which the respective first electrodes (11) of the switches are connected to each other and to a first bias means, the respective second electrodes (13) of the switches being connected to each other and to a second polarization.
    [14" id="c-fr-0014]
    14. System comprising a plurality of switches, according to one of claims 1 to 12, wherein the first electrode (11) of a first switch is connected to a first bias means, the second electrode of the first switch being connected to the first electrode of a next switch, and the second electrode of a last switch is connected to a second bias means.
    [15" id="c-fr-0015]
    15. The system of claim 13 or 14, characterized in that the first bias means is a current generator and the second bias means is also a current generator.
    S.60528
    1/8
    N®
    2/8
    Y (m)
    Temp
    Seal © = E3
    1. ".
    1.5S
    1.50
    1.45
    1Λ0
    1.35
    1.30 1 25
    1.20
    1.15
    1.10
    1.05
    1.00
    0.95
    0.90
    0.85
    0.80
    0.75
    0.70
    0.65
    0.60
    0.55
    0.50
    0.45
    0.40
    0.35
    0.30
    0.30
    类似技术:
    公开号 | 公开日 | 专利标题
    FR3053536B1|2019-07-05|SWITCH COMPRISING A STRUCTURE BASED ON PHASE CHANGE MATERIAL | OF WHICH ONLY ONE PART IS ACTIVABLE
    EP3457491B1|2020-06-17|System for rf/dc decoupling for rf switches made from phase change material
    EP2605274B1|2015-02-18|Electronic component
    EP2615612B1|2014-09-10|Phase transition memory cell
    FR2981795A1|2013-04-26|FLIP-CHIP HYBRIDIZATION OF MICROELECTRONIC COMPONENTS BY LOCAL HEATING OF CONNECTION ELEMENTS
    EP2706583B1|2015-05-13|Phase-change memory cell
    WO2016113503A1|2016-07-21|Magnetic memory slot
    FR2748859A1|1997-11-21|HIGH FREQUENCY, PLANAR, SWITCHABLE RESONATOR AND FILTER PRODUCED USING SUCH A RESONATOR AND MANUFACTURING METHOD
    KR20160044142A|2016-04-25|Method of fabricating the variable resistance memory
    EP3483890A1|2019-05-15|Memory point with phase-change material
    EP3483889B1|2021-06-16|Non-volatile memory chip built into phase-change material
    EP0817337A1|1998-01-07|Method of fabricating a surface emitting laser
    EP2591506B1|2018-05-30|Method of forming a microelectronic device having metal interconnection levels connected by programmable vias
    EP3168885B1|2018-08-01|Method for manufacturing a pcram memory
    EP2706582B1|2015-04-08|Phase-change memory cell
    EP3214664B1|2018-08-15|Switch structure having multiple phase change material channels and interdigitated control electrodes
    EP2681768A2|2014-01-08|Process for monolithic series connection of the photovoltaic cells of a solar module and a photovoltaic module obtained by this process
    FR2556882A1|1985-06-21|FAST SEMICONDUCTOR COMPONENT, IN PARTICULAR DIODE PIN HIGH VOLTAGE
    EP3477644A1|2019-05-01|Memory point with phase-change material
    EP1307929B1|2006-10-11|Method for making pyroelectric sensors comprising a thin pyroelectric film requiring electric polarisation
    EP2684228B1|2017-01-18|Electronic memory device
    EP3477716A1|2019-05-01|Memory point with phase-change material
    EP3171417A1|2017-05-24|Electro-chemically operable electronic component and method for producing the operable electronic component
    同族专利:
    公开号 | 公开日
    EP3267527A1|2018-01-10|
    US20180005786A1|2018-01-04|
    US10529515B2|2020-01-07|
    FR3053536B1|2019-07-05|
    引用文献:
    公开号 | 申请日 | 公开日 | 申请人 | 专利标题
    WO2009001262A1|2007-06-28|2008-12-31|Nxp B.V.|Electric device comprising phase change material and heating element|
    EP2706582A1|2012-09-10|2014-03-12|STMicroelectronics SAS|Phase-change memory cell|
    US20140266517A1|2013-03-13|2014-09-18|The Penn State Research Foundation|Radio frequency switch and processes of selectively regulating radio frequency energy transmission|
    US20160035973A1|2014-06-06|2016-02-04|The Regents Of The University Of Michigan|Directly Heated RF Phase Change Switch|
    US20160079019A1|2014-09-12|2016-03-17|Northrop Grumman Systems Corporation|Phase-change material distributed switch systems|
    US5905401A|1996-09-09|1999-05-18|Micron Technology, Inc.|Device and method for limiting the extent to which circuits in integrated circuit dice electrically load bond pads and other circuit nodes in the dice|
    KR100533958B1|2004-01-05|2005-12-06|삼성전자주식회사|Phase-change memory device and method of manufacturing the same|
    TWI273703B|2005-08-19|2007-02-11|Ind Tech Res Inst|A manufacture method and structure for improving the characteristics of phase change memory|
    KR100650761B1|2005-09-30|2006-11-27|주식회사 하이닉스반도체|Phase change memory device and method of manufacturing the same|
    CN101322205A|2005-10-03|2008-12-10|模拟设备公司|MEMS switch contact system|
    US7829876B2|2005-11-21|2010-11-09|Macronix International Co., Ltd.|Vacuum cell thermal isolation for a phase change memory device|
    US7772583B2|2008-08-21|2010-08-10|Micron Technology, Inc.|Memory devices and methods of forming the same|
    KR20110090583A|2010-02-04|2011-08-10|삼성전자주식회사|Phase changeable memory devices and methods of forming the same|
    US20140301137A1|2011-10-20|2014-10-09|SK Hynix Inc.|Phase-change memory device having phase-change region divided into multi layers and operating method thereof|FR3071364B1|2017-09-19|2019-09-13|Commissariat A L'energie Atomique Et Aux Energies Alternatives|RF / DC DECOUPLING SYSTEM FOR RF SWITCHES BASED ON PHASE CHANGE MATERIAL|
    US10862032B2|2018-08-14|2020-12-08|Newport Fab, Llc|Phase-change materialradio frequencyswitch|
    US10770389B2|2018-08-14|2020-09-08|Newport Fab, Llc|Phase-change materialradio frequencyswitches with capacitively coupled RF terminals|
    US10686010B2|2018-08-14|2020-06-16|Newport Fab, Llc|Fabrication of semiconductor device using a shared material in a phase-change materialswitch region and a resonator region|
    US10454027B1|2018-08-14|2019-10-22|Newport Fab, Llc|Phase-change materialradio frequencyswitches with stressor layers and contact adhesion layers|
    US10833004B2|2018-08-14|2020-11-10|Newport Fab, Llc Dba Jazz Semiconductor|Capacitive tuning circuit using RF switches with PCM capacitors and PCM contact capacitors|
    US10944052B2|2018-08-14|2021-03-09|Newport Fab, Llc|Phase-change materialradio frequencyswitch using a chemically protective and thermally conductive layer|
    US10644236B2|2018-08-14|2020-05-05|Newport Fab, Llc|Phase-change materialradio frequencyswitch with reduced parasitic capacitance|
    US10615338B2|2018-08-14|2020-04-07|Newport Fab, Llc|Phase-change materialcontacts with slot lower portions and contact dielectric for reducing parasitic capacitance and improving manufacturability in PCM RF switches|
    US11196401B2|2018-08-14|2021-12-07|Newport Fab, Llc|Radio frequencymodule using a tunable RF filter with non-volatile RF switches|
    US10916540B2|2018-08-14|2021-02-09|Newport Fab, Llc|Device including PCM RF switch integrated with group III-V semiconductors|
    US10475993B1|2018-08-14|2019-11-12|Newport Fab, Llc|PCM RF switch fabrication with subtractively formed heater|
    US10707125B2|2018-08-14|2020-07-07|Newport Fab, Llc|Fabrication of contacts in an RF switch having a phase-change materialand a heating element|
    US10476001B1|2018-08-14|2019-11-12|Newport Fab, Llc|Manufacturing RF switch based on phase-change material|
    US10593404B2|2018-08-14|2020-03-17|Newport Fab, Llc|Array architecture for large scale integration of phase-change materialradio frequencyswitches|
    US10566321B1|2018-08-14|2020-02-18|Newport Fab, Llc|Wafer-to-wafer and die-to-wafer bonding of phase-change materialswitches with integrated circuits and bonded two-die devices|
    US10937960B2|2018-08-14|2021-03-02|Newport Fab, Llc|Concurrent fabrication of and structure for capacitive terminals and ohmic terminals in a phase-change materialradio frequencyswitch|
    US10686128B2|2018-08-14|2020-06-16|Newport Fab, Llc|Semiconductor devices having phase-change materialradio frequencyswitches and integrated passive devices|
    US10770657B2|2018-08-14|2020-09-08|Newport Fab, Llc|High reliability phase-change materialradio frequencyswitch using trap-rich region|
    US11158794B2|2018-08-14|2021-10-26|Newport Fab, Llc|High-yield tunable radio frequencyfilter with auxiliary capacitors and non-volatile RF switches|
    US10686130B2|2018-08-14|2020-06-16|Newport Fab, Llc|Phase-change materialcontact configurations for improving performance in PCM RF switches|
    US11159145B2|2018-08-14|2021-10-26|Newport Fab, Llc|Radio frequencyfiltering using phase-change materialRF switches|
    US11057019B2|2018-08-14|2021-07-06|Newport Fab, Llc|Non-volatile adjustable phase shifter using non-volatile radio frequencyswitch|
    US10644235B2|2018-08-14|2020-05-05|Newport Fab, Llc|Phase-change materialradio frequencyswitch with reduced parasitic capacitance|
    US10693061B2|2018-08-14|2020-06-23|Newport Fab, Llc|Semiconductor devices having phase-change materialradio frequencyswitches and integrated active devices|
    US10862477B2|2018-08-14|2020-12-08|Newport Fab, Llc|Read out integrated circuitfor rapid testing of functionality of phase-change materialradio frequencyswitches|
    US10529922B1|2018-08-14|2020-01-07|Newport Fab, Llc|Substrates and heat spreaders for heat management and RF isolation in integrated semiconductor devices having phase-change materialradio frequencyswitches|
    US10536124B1|2018-08-14|2020-01-14|Newport Fab, Llc|Power amplifier module using phase-change materialradio frequencyswitches and selectable matching networks|
    US11050022B2|2018-08-14|2021-06-29|Newport Fab, Llc|Radio frequencyswitches having phase-change materialand heat management for increased manufacturability and performance|
    US10566528B1|2018-08-14|2020-02-18|Newport Fab, Llc|Heating element designs for phase-change materialradio frequencyswitches|
    US10622560B2|2018-08-14|2020-04-14|Newport Fab, Llc|Semiconductor chips and systems having phase-change materialswitches integrated with micro-electrical-mechanical systemsand/or resonators|
    US10749109B2|2018-08-14|2020-08-18|Newport Fab, Llc|Read out integrated circuitfor rapid testing and characterization of resistivity change of heating element in phase-change materialradio frequencyswitch|
    US10739290B2|2018-08-14|2020-08-11|Newport Fab, Llc|Read out integrated circuitfor rapid testing and characterization of conductivity skew of phase-change materialin PCM radio frequencyswitches|
    US10461253B1|2018-08-14|2019-10-29|Newport Fab, Llc|High reliability RF switch based on phase-change material|
    US10978639B2|2018-08-14|2021-04-13|Newport Fab, Llc|Circuits for reducing RF signal interference and for reducing DC power loss in phase-change materialRF switches|
    US10916585B2|2018-08-14|2021-02-09|Newport Fab, Llc|Stacked phase-change materialradio frequencyswitches with improved RF power handling|
    US10903418B2|2018-11-19|2021-01-26|International Business Machines Corporation|Low resistance electrode for high aspect ratio confined PCM cell in BEOL|
    法律状态:
    2017-07-31| PLFP| Fee payment|Year of fee payment: 2 |
    2018-01-05| PLSC| Search report ready|Effective date: 20180105 |
    2018-07-27| PLFP| Fee payment|Year of fee payment: 3 |
    2019-07-31| PLFP| Fee payment|Year of fee payment: 4 |
    2020-07-31| PLFP| Fee payment|Year of fee payment: 5 |
    2021-07-29| PLFP| Fee payment|Year of fee payment: 6 |
    优先权:
    申请号 | 申请日 | 专利标题
    FR1656363|2016-07-04|
    FR1656363A|FR3053536B1|2016-07-04|2016-07-04|SWITCH COMPRISING A STRUCTURE BASED ON PHASE CHANGE MATERIALOF WHICH ONLY ONE PART IS ACTIVABLE|FR1656363A| FR3053536B1|2016-07-04|2016-07-04|SWITCH COMPRISING A STRUCTURE BASED ON PHASE CHANGE MATERIALOF WHICH ONLY ONE PART IS ACTIVABLE|
    EP17178773.2A| EP3267527A1|2016-07-04|2017-06-29|Switch having a structure made of phase-change materials of which only one portion can be activated|
    US15/636,815| US10529515B2|2016-07-04|2017-08-04|Switch including a phase change materials based structure where only one part is activatable|
    [返回顶部]